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| 晶圓凸塊簡稱凸塊。可分為金凸塊（Gold bumping）及錫鉛凸塊（Solder bumping），利用薄膜、黃光與電鍍製程在晶片之焊墊上製作金凸塊，接著再利用熱能和壓力將凸塊與焊錫介面接合進行封裝（Assembly）；此技術可大幅縮小IC的體積，並具有密度大、低感應、低成本、散熱能力佳等優點，目前金凸塊技術多應用於LCD驅動IC，可直接崁入顯示螢幕上以節省空間。 此凸塊適合應用於如Flip Chip（覆晶封裝）等，諸如液晶顯示器、記憶體、微處理、射頻IC等皆可應用。 |
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| 金凸塊(Au bump)常見於積體電路封裝中的TCP, COF和COG技術及光電元件的對外連接(Off-Chip Interconnect)。金凸塊的製程比錫鉛的凸塊要來得簡單且低成本。 |
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3.1 LCD Driver IC: 平面顯示器(LCD Panel, PDP Panel, or OLED Panel…)的驅動IC
3.2 CIS: CMOS image sensor
3.3 Finger Print sensor
3.4 RFID
3.5 Medical devices |
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| Item |
Standard Specification |
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+ / - 2 um |
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1.1 Uniformity Within Wafer |
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< / = 2.75 um |
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1.2 Co-planarity Within Die |
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< / = 1.5 um |
| 2. Bump Size |
Width : + / - 2 um for pitch < / = 27 um
Length : + / -2.5 um for pitch < / = 27 um |
| 3. Roughness |
< / = 2 um [ Rim included ] as passivation thickness < / = 1.3 um |
| 4. Shear Strength |
> / = 4.5 g / mil ^2 [ 7.2 E - 3 g/um^2 ] |
| 5. Hardness |
Target + / - 15 Hv, Target = 45 ~ 65 Hv |
| 6. Bump Sidewall |
87 ~ 90 Degree |
| 7. Bumping Method |
Electroplating |
| 8. Bump Meterial |
99.9 + % Pure Gold |
| 9. UBM Deposition Method |
Sputtering |
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