The semiconductor industry is primarily focused on the advancement of silicon (Si) wafer technology. However, with the maturation and growth of applications such as 5G, data centers, electric vehicles, and space technology, there is an increasing demand for high-power, low-loss, and miniaturized devices. Gallium Nitride (GaN) has emerged as the next-generation material that meets these requirements.
GaN is a wide bandgap (WBG) semiconductor material, belonging to the family of compound semiconductors. It offers superior electron transport efficiency compared to traditional silicon, along with exceptional properties such as high temperature and high voltage resistance, excellent heat dissipation, superior energy conversion efficiency, and high-frequency operation. GaN can be epitaxially deposited on various substrates, including silicon (Si), silicon carbide (SiC), and sapphire. GaN-on-Si production, based on existing silicon technology, offers lower capital costs.
As a collaborative development partner, our company provides advanced packaging technology and is dedicated to assisting customers in expanding their presence in the GaN market.
Main Application
5G Communication
Data Center
Automotive Electronics
EV, Electric Vehicle
Wireless Charging
Aerospace
Technical services provided by Chipbond
Wafer size: 6-inch, 8-inch
Process technology: Cu Pillar Bump, Solder Bump, Ball Placement, etc., for bumping processes, DC testing, RF testing, wafer thinning, and dicing.
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