SiGe technology is compatible with mainstream silicon wafer fabrication processes. In high-frequency environments, SiGe technology offers superior high-frequency characteristics and advantages such as low noise and low power consumption compared to silicon. It is suitable for integrating with CMOS to form high-density, cost-effective, and low-cost BiCMOS fabrication technology. SiGe technology also provides solutions for downsizing components.
Main Application
RF IC
CMOS
High-Speed CMOS
BiCMOS
HBTs
SiGe rectifier
PA (Power Amplifier)
Bluetooth
Mobile Phone
SoC (System-on-Chip) or Fiber Optic Backbone Network SONET Interface IC
Process Technologies: RDL (Re-Distribution Layer) & Cu Pillar Bump, RDL & Solder Bump, Ball Placement and other bumping technologies, DC and RF wafer testing, DPS (Die Processing Service) for wafer thinning and and dicing..
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