Silicon Carbide (SiC) is a compound semiconductor material comprised of silicon (Si) and carbon (C), offering several advantages over traditional silicon materials. These include a wider bandgap (3.3eV), higher thermal conductivity, and higher breakdown electric field. These unique characteristics contribute to SiC's superior electrical conductivity, efficient heat dissipation at high temperatures, and excellent resistance to high voltage.
Both SiC and Gallium Nitride (GaN) belong to the third generation of semiconductor materials, sharing similar properties but with slight differences in their applications. GaN is well-suited for medium-voltage (100~650V) and high-frequency products, while SiC excels in higher voltage (>650V) and high-temperature applications.
SiC's exceptional performance in high-voltage environments has positioned SiC MOSFET as a viable replacement for Si IGBT, achieving over 80% reduction in switching losses and significant energy loss reduction during power conversion. Additionally, leveraging its unique material properties, SiC enables a substantial reduction in chip module size, potentially shrinking it to just 1/10 of its original size.
Main Application
Automotive Electronics
EV Charging System
Inverter
Photovoltaic
UPS, Uninterruptible power system
Power Supply
Technical services provided by Chipbond
Wafer size: 6-inch, 8-inch
Process technology: Cu Pillar Bump, Solder Bump, Ball Placement, etc., for bumping processes.
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